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Proceedings Paper

Leap ahead in mask data processing for technology nodes below 130 nm
Author(s): Corinne Miramond; Dominique Goubier; Michael Chomat; Yorick Trouiller; Yves Fabien Rody; Olivier Toublan
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Paper Abstract

To process 0.13 micrometers designs and below, a new data processing flow has been implemented at STMicroelectronics Crolles based on the Mentor Graphics suite. To deal more easily with model-based corrections and additional verifications on critical layers a separation of the design database in critical and non-critical layers has been introduced. The resist model and the correction parameters are developed in an iterative way. File sizes and data processing time are the main issues in the mask data preparation. The impact on mask manufacturing has been also illustrated in this paper.

Paper Details

Date Published: 11 March 2002
PDF: 6 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458354
Show Author Affiliations
Corinne Miramond, STMicroelectronics (France)
Dominique Goubier, STMicroelectronics (France)
Michael Chomat, STMicroelectronics (France)
Yorick Trouiller, CEA-LETI (France)
Yves Fabien Rody, Philips Semiconductors (France)
Olivier Toublan, Mentor Graphics (France)


Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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