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Proceedings Paper

Use of KRS-XE positive chemically amplified resist for optical mask manufacturing
Author(s): Brian Ashe; Christina Deverich; Paul A. Rabidoux; Barbara Peck; Karen E. Petrillo; Marie Angelopoulos; Wu-Song Huang; Wayne M. Moreau; David R. Medeiros
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Paper Abstract

The traditional mask making process uses chain scission-type resists such as PBS, poly(butene-1-sulfone), and ZEP, poly(methyl a-chloroacrylate-co-a-methylstyrene) for making masks with dimensions greater than 180nm. PBS resist requires a wet etch process to produce patterns in chrome. ZEP was employed for dry etch processing to meet the requirements of shrinking dimensions, optical proximity corrections and phase shift masks. However, ZEP offers low contrast, marginal etch resistance, organic solvent development, and concerns regarding resist heating with its high dose requirements1. Chemically Amplified Resist (CAR) systems are a very good choice for dimensions less than 180nm because of their high sensitivity and contrast, high resolution, dry etch resistance, aqueous development, and process latitude2. KRS-XE was developed as a high contrast CA resist based on ketal protecting groups that eliminate the need for post exposure bake (PEB). This resist can be used for a variety of electron beam exposures, and improves the capability to fabricate masks for devices smaller than 180nm. Many factors influence the performance of resists in mask making such as post apply bake, exposure dose, resist develop, and post exposure bake. These items will be discussed as well as the use of reactive ion etching (RIE) selectivity and pattern transfer.

Paper Details

Date Published: 11 March 2002
PDF: 9 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458348
Show Author Affiliations
Brian Ashe, IBM Microelectronics Div. (United States)
Christina Deverich, IBM Microelectronics Div. (United States)
Paul A. Rabidoux, IBM Microelectronics Div. (United States)
Barbara Peck, IBM Microelectronics Div. (United States)
Karen E. Petrillo, IBM Thomas J. Watson Research Ctr. (United States)
Marie Angelopoulos, IBM Thomas J. Watson Research Ctr. (United States)
Wu-Song Huang, IBM Thomas J. Watson Research Ctr. (United States)
Wayne M. Moreau, IBM Thomas J. Watson Research Ctr. (United States)
David R. Medeiros, IBM Thomas J. Watson Research Ctr. (United States)

Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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