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Proceedings Paper

Extended chamber matching and repeatability study for chrome etch
Author(s): Yi-Chiau Huang; Melisa J. Buie; Brigitte C. Stoehr; Alex H. Buxbaum; Guenther G. Ruhl
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Paper Abstract

Shrinking design rules, optical proximity correction and advanced phase shifting techniques require new methods of photomask manufacturing. The Applied Materials Centura photomask etch chamber leverages Applied Materials' extensive etch experience to provide an innovative dry etch solution to the mask dry etch challenges for < 0.13 micrometers device generations. Repeatable, consistent, stable etch performance is critical for advanced mask manufacturing. An extended chamber matching and repeatability study for chrome etch found that stable chrome and photoresist etch rates (and therefore selectivities) are produced on the Applied Materials Centura photomask etch chamber. The etch responses are consistent mask to mask as well as chamber to chamber. Prior to the extended study, pumping efficiencies, RF source and bias calibrations and optical emission spectral responses were compared. Since the study was performed at several different sites, the metrology tools were calibrated using masks specifically designed for this purpose. The marathon testing illustrates the stable etch performance over time.

Paper Details

Date Published: 11 March 2002
PDF: 9 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458344
Show Author Affiliations
Yi-Chiau Huang, Applied Materials (United States)
Melisa J. Buie, Applied Materials (United States)
Brigitte C. Stoehr, Applied Materials (United States)
Alex H. Buxbaum, Etec Systems, Inc. (United States)
Guenther G. Ruhl, Infineon Technologies AG (Germany)


Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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