Share Email Print
cover

Proceedings Paper

Analysis of dry etch loading effect in mask fabrication
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

As the design rule is rapidly decreased, tighter critical dimension (CD) control is highly requested. Considering the mask error enchantment factor, higher mask quality below 8nm should be guaranteed for 0.10micrometers generation devices. Among a number of actors causing CD errors in e-beam mask fabrication, dry etching plays an important role. Therefore, it is necessary to reduce loading effect for accurate CD control. As the loading effect in the dry etching is closely related to the selectivity of Cr to resist, a clue to reduce the loading effect is to reduce loading. In this paper, we will clarify the relation mechanism between the selectivity and loading effect. We will investigate the degree of loading effect by quantifying the selectivity with different etch processes.

Paper Details

Date Published: 11 March 2002
PDF: 7 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458341
Show Author Affiliations
Jeong-Yun Lee, Samsung Electronics Co., Ltd. (South Korea)
Sung-Yong Cho, Samsung Electronics Co., Ltd. (South Korea)
Chang-Hwan Kim, Samsung Electronics Co., Ltd. (South Korea)
Sung-Woo Lee, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

© SPIE. Terms of Use
Back to Top