Share Email Print

Proceedings Paper

Extending the performance of KRS-XE for high-throughput electron-beam lithography for advanced mask making
Author(s): David R. Medeiros; Karen E. Petrillo; James Bucchignano; Marie Angelopoulos; Wu-Song Huang; Wenjie Li; Wayne M. Moreau; Robert Lang; Ranee W. Kwong; Christopher Magg; Brian Ashe
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The performance of KRS-XE, a low activation energy, chemically amplified resist designed specifically for mask making with electron beam lithography, has been extended in terms of its sensitivity, coated-film stability and etch resistance. By careful manipulation of resist composition, high sensitivity formulations have been generated that will allow exposure doses of less than 10 mC/cm2 with 50 keV electron beam tools. This sensitivity enhancement has been achieved without sacrificing the robust process latitude previously reported for this resist. The performance of this resist can be maintained, even in coated film form, for prolonged periods of time by careful packaging of the coated films. Additionally, formulations with etch resistance versus chlorine/oxygen plasma in excess of that of novolak-based resists have been generated by the incorporation of organometallic additives. The combination of these improvements leads to resist formulations that will allow the high resolution and throughput that is demanded for state-of-the art mask making applications.

Paper Details

Date Published: 11 March 2002
PDF: 9 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458334
Show Author Affiliations
David R. Medeiros, IBM Thomas J. Watson Research Ctr. (United States)
Karen E. Petrillo, IBM Thomas J. Watson Research Ctr. (United States)
James Bucchignano, IBM Thomas J. Watson Research Ctr. (United States)
Marie Angelopoulos, IBM Thomas J. Watson Research Ctr. (United States)
Wu-Song Huang, IBM Microelectronics Div. (United States)
Wenjie Li, IBM Microelectronics Div. (United States)
Wayne M. Moreau, IBM Microelectronics Div. (United States)
Robert Lang, IBM Microelectronics Div. (United States)
Ranee W. Kwong, IBM Microelectronics Div. (United States)
Christopher Magg, IBM Microelectronics Div. (United States)
Brian Ashe, IBM Microelectronics Div. (United States)

Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

© SPIE. Terms of Use
Back to Top