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Proceedings Paper

New photomask patterning method based on KrF stepper
Author(s): Tae-Jung Ha; Yong-Kyoo Choi; Oscar Han
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Paper Abstract

To solve very low throughput of e-beam writer, a new patterning method based on stepper, photomask repeater has been developed. For the KrF photomask repeater development we have modified a wafer-exposing stepper to expose photomasks. In this paper, we intended to clarify the feasibility of 0.15 micrometers generation mask fabrication with KrF photomask repeater. Interfield registration almost satisfied the 28 micrometers specification. Intra-field mis- registration was 10 nm in 18 mm by 18 mm field area and so we have to use a small field size and basically improve this intra-field mis-registration. CD uniformity could not meet the 13 nm specification. Though the evaluated results of KrF photomask repeater process have not satisfied the specification of 0.15 micrometers generation mask, we have found the mask fabrication with KrF photomask repeater is feasible with optimization of field and process, we have found the mask fabrication with KrF photomask repeater is feasible with optimization of field and process.

Paper Details

Date Published: 11 March 2002
PDF: 8 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458329
Show Author Affiliations
Tae-Jung Ha, Hynix Semiconductor Inc. (South Korea)
Yong-Kyoo Choi, Hynix Semiconductor Inc. (South Korea)
Oscar Han, Hynix Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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