Share Email Print

Proceedings Paper

Adjustment of optical proximity correction (OPC) software for mask process correction (MPC). Module 1: Optical mask writing tool simulation
Author(s): Alexandra Barberet; Gilles L. Fanget; Peter D. Buck; Olivier Toublan; Jean-Charles Richoilley; Michel Tissier
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this paper we focus on a laser/dry etch mask process simulation. Using Mentor Graphics Calibre RET tool suite, we exploit the similarity between the image on laser based mask writers and the image on wafer steppers. Doing so, we adapt a 'Silicon process simulation' to a 'mask process simulation'. The mask process tuning is performed with Mentor test patterns and then we simulate the mask image of a 4x scale database. The result is saved as a 1x scale gds file and is used, in a normal way, for a 193nm lithography simulation. We notice a large difference between the aerial image of the 193nm lithography based on the database and the one based on the mask process simulation.

Paper Details

Date Published: 11 March 2002
PDF: 11 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458328
Show Author Affiliations
Alexandra Barberet, DuPont Photomasks, Inc. (France)
Gilles L. Fanget, CEA-LETI (France)
Peter D. Buck, DuPont Photomasks, Inc. (United States)
Olivier Toublan, Mentor Graphics Corp. (France)
Jean-Charles Richoilley, DuPont Photomasks, Inc. (France)
Michel Tissier, DuPont Photomasks, Inc. (France)

Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

© SPIE. Terms of Use
Back to Top