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Proceedings Paper

Wavelength-dependent mask defect inspection and printing
Author(s): Martin McCallum
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Paper Abstract

In this paper we use simulations to establish the size of quartz defects we need to detect in alternating aperture phase shifting masks (altPSM) when imaged in high NA 248nm and 193nm 4X exposure systems. Such as those that will be used at the 130nm and 100nm technology nodes. Data will be presented showing that smaller defects in the center of the shifted space than at the edge of the space cause the allowable CD variation to be reached. It will be shown that the most sensitive position for a quartz defect in a shifted space is not at the edge or center of the space, but rather at a point between these two. We will then use advanced simulation techniques, that take into account the extra non-planar incident waves we must consider in 1X imaging, to establish how these defects are 'seen' by 1X actinic and non-actinic mask inspection systems. The relatively large effect upon the transmitted aerial image of a defect in an actinic inspection, especially for defects in the center of the shifted space, when compared to a non-actinic inspection will be shown.

Paper Details

Date Published: 11 March 2002
PDF: 7 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458326
Show Author Affiliations
Martin McCallum, Nikon Precision Europe GmbH (United Kingdom)

Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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