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Proceedings Paper

Polarized phase shift mask: concept, design, and potential advantages to photolithography process and physical design
Author(s): Ruoping Wang; Warren D. Grobman; Alfred J. Reich; Matthew A. Thompson
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Paper Abstract

In this paper we introduce the concept and design of a novel phase shift mask technology, Polarized Phase Shift Mask (P:PSM). The P:PSM technology utilizes non-interference between orthogonally polarized light sources to avoid undesired destructive interference seen in conventional two-phase shift mask technology. Hence P:PSM solves the well-known 'phase edge' or 'phase conflict' problem. By obviating the 2nd exposure and 2nd mask in current Complementary Phase Shift Mask (C:PSM) technology, this single mask/single exposure technology offers significant advantages towards photolithography process as well as pattern design. We use examples of typical design and process difficulties associated with the C:PSM technology to illustrate the advantages of the P:PSM technology. We present preliminary aerial image simulation results that support the potential of this new reticle technology for enhanced design flexibility. We also propose possible mask structures and manufacturing methods for building a P:PSM.

Paper Details

Date Published: 11 March 2002
PDF: 12 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458317
Show Author Affiliations
Ruoping Wang, Motorola (United States)
Warren D. Grobman, Motorola (United States)
Alfred J. Reich, Motorola (United States)
Matthew A. Thompson, Motorola (United States)


Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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