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Proceedings Paper

Using high-resolution (0.13 um) UV-based reticle inspection for CD uniformity in incoming quality control
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Paper Abstract

The paper presents the use of the Linewidth Bias Monitor (LBM), the critical dimension (CD) uniformity mapping option of the ArisTM21i die-to-database mask inspection system, for mask process control and incoming quality control (IQC) in the wafer fab. LBM is qualified for this purposes by baselining it with CD measurements. Masks, provided by different commercial vendors, are evaluated based on the LBM maps obtained during mask inspection. Mean-to-target and 3-sigma values are evaluated and compared. The results are presented. In addition, a case, where LBM identified a killer CD variation during IQC is presented.

Paper Details

Date Published: 11 March 2002
PDF: 9 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458308
Show Author Affiliations
Ernesto Villa, STMicroelectronics (Italy)
Emanuele Baracchi, STMicroelectronics (Italy)
Anja Rosenbusch, Etec Systems, Inc. (United States)
Michael M. Har-zvi, Etec Systems, Inc. (Israel)
Gidon Gottlib, Etec Systems, Inc. (Israel)

Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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