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Proceedings Paper

PMJ01 panel discussion review: issues on mask technology for 100-nm lithography
Author(s): Hiroyoshi Tanabe; Hisatake Sano
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Paper Abstract

We discussed the following topics at the panel discussion of Photomask Japan 2001. 1) Lithography roadmap from 130-nm to 90-nm node. 2) Lithography tool selection, KrF, ArF, or F2 for each node. 3) Mask technology issues for ArF and F2 lithography. 4) CD control and MEEF reduction. 5) OPC and PSM applications. Panelists agreed that critical issues for 100-nm lithography are CD control, defect control and mask cost. Mask suppliers presented potential solutions for these issues: improvement of mask writing tools, refinement of resist process etc. By solving these issues 100-nm lithography can be realized by 2004.

Paper Details

Date Published: 11 March 2002
PDF: 8 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458306
Show Author Affiliations
Hiroyoshi Tanabe, Elpida Memory, Inc. (Japan)
Hisatake Sano, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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