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Proceedings Paper

High transmittance attenuated phase shifting mask of chromium aluminum oxynitride
Author(s): Eunchul Choi; Eunah Kim; Hyoungdo Kim; Yong-Hoon Kim; Huyong Tian; Kwangsoo No
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Paper Abstract

In this study, high-transmittance attenuated Phase Shift Masks(HT-Att-PSMs) have been investigated to satisfy the requirements of 20 +/- 5 percent transmittance and 180 degrees phase shift at the exposure wavelength of 193 nm for ArF laser (248nm for KrF laser) and less than 40 percent transmittance at the inspection wavelength of 248 nm(365 nm for KrF laser). Chromium aluminum oxynitride has been studied as a new candidate material for HT-Att-PSM. At first, optimum conditions of composition and thickness were shown by n(refractive index)-k(extinction coefficient)-d(thickness) charts developed to simulate the optimum range of optical constant for HT-Att-PSM using the matrix method. Chromium aluminum oxynitride films were deposited by changing of variables such as target composition, gas flow rate, deposition power and deposition pressure to find optimum conditions to meet the simulated range. This study examined effects of processing variables on the optical properties of chromium aluminum oxynitride films and established optimum conditions of chromium aluminum oxynitride films for HT-Att-PSM.

Paper Details

Date Published: 11 March 2002
PDF: 10 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458281
Show Author Affiliations
Eunchul Choi, Korea Advanced Institute of Science and Technology (South Korea)
Eunah Kim, Korea Advanced Institute of Science and Technology (South Korea)
Hyoungdo Kim, Samsung Electronics Co., Ltd. (South Korea)
Yong-Hoon Kim, Samsung Electronics Co., Ltd. (South Korea)
Huyong Tian, Korea Advanced Institute of Science and Technology (South Korea)
Kwangsoo No, Korea Advanced Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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