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Proceedings Paper

Optimization of alternating phase shifting mask structure
Author(s): Han-Sun Cha; Se-Jong Choi; Si-Yeul Yoon; Sung-Mo Jung; Sang-Soo Choi; Soo-Hong Jeong
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Paper Abstract

Many studies have reported that the alternating phase shift mask (Alt. PSM) improves resolution and depth of focus (DOF). The purpose of this study is to investigate the influence of process latitude and optimize undercut and pre etch depth of both single trench and dual trench process employing the Solid-CMTM simulation tool for 248 nm DUV lithography system. To compensate for the imbalance intensity, we adopted the amount of undercut in the phase shifter regions of both single trench and dual trench. The results suggest that process is improved with optimized undercut for 130 nm line & space (L/S). For the single trench, we can see that with undercut of about 800 Angstrom the max intensities are equal. In the case of dual trench, the margins for image balance of 800 Angstrom and 1600 Angstrom undercuts was obtained up to 800 Angstrom, 1200 Angstrom of pre etch depth, respectively. Finally, it was found that the effect of undercut was improving the process latitude and the balance intensity of both single trench and dual trench.

Paper Details

Date Published: 11 March 2002
PDF: 9 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458265
Show Author Affiliations
Han-Sun Cha, PKL Corp. (South Korea)
Se-Jong Choi, PKL Corp. (South Korea)
Si-Yeul Yoon, PKL Corp. (South Korea)
Sung-Mo Jung, PKL Corp. (South Korea)
Sang-Soo Choi, PKL Corp. (South Korea)
Soo-Hong Jeong, PKL Corp. (South Korea)

Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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