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Proceedings Paper

Challenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM
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Paper Abstract

Mask error effects of attenuated PSM wafer CD and process windows were analyzed by simulation, and proven experimentally for dense line applications. Among possible mask errors, mask CD variations dominate wafer CD control like a conventional binary mask, but phase and transmission errors are also significant especially when a defocus condition is applied. There is an apparent trend of MEEF versus mask bias. It is increased as mask bias goes towards the positive direction, i.e., overexposure condition, where process window can be maximized. Therefore mask bias should be chosen carefully on the basis of small MEEF as well as large process window.

Paper Details

Date Published: 11 March 2002
PDF: 14 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458259
Show Author Affiliations
Young-Chang Kim, Samsung Electronics Co., Ltd. (South Korea) and IMEC (Belgium)
Geert Vandenberghe, IMEC (Belgium)
Staf Verhaegen, IMEC (Belgium)
Kurt G. Ronse, IMEC (Belgium)

Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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