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Proceedings Paper

Thin film stress control of absorber stack materials for EUVL reticles
Author(s): James R. Wasson; Diana Convey; Pawitter J. S. Mangat; D. Frank Bazzarre; Lubomir Parobek
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Paper Abstract

Extreme ultraviolet lithography (EUVL) is the leading candidate for next generation lithography with the potential for extendibility beyond the 50-nm node. The three-layer absorber stack for EUVL reticles consists of an absorber, repair buffer and etch-stop layers, while a two-layer absorber stack eliminates the etch-stop layer. A portion of the mask pattern distortion can be assigned to the absorber stack's film stress. Ideally, the absorber stack films would have zero stress uniformly across the mask, which would produce zero pattern distortion when the films were removed during the pattern transfer processes. Maintaining adequate thin film stress control and uniformity relies on accurate thin film thickness measurements. The thin film deposition parameters can have a significant influence on the metrology technique's ability to measure the thin film's thickness. We have studied resistive and photonic metrology techniques for absorber stack thin film thickness measurement and stress control.

Paper Details

Date Published: 11 March 2002
PDF: 11 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458257
Show Author Affiliations
James R. Wasson, Motorola (United States)
Diana Convey, Motorola (United States)
Pawitter J. S. Mangat, Motorola (United States)
D. Frank Bazzarre, AXIC Inc. (United States)
Lubomir Parobek, AXIC Inc. (United States)

Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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