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Proceedings Paper

EPL reticle technology
Author(s): Norihiro Katakura; Shin-ichi Takahashi; Masashi Okada; Sumito Shimizu; Shintaro Kawata
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Paper Abstract

Nikon, in collaboration with IBM, has been developing EB stepper, which is the electron beam projection lithography (EPL) system for 70 nm node generation and below. As the standard reticle for EB stepper, the scattering silicon stencil type is used to obtain highest performance. The EB reticle has thin silicon membranes of thickness 2 micrometers and membrane size 1.13 mm square with stencil opening patterns, which are supported by a grid-grillage structure. The development of the EB reticle is one of key issues in the EB stepper development. We had accomplished 76nm reticle development using silicon-on-insulator wafer with a stress- controlled membrane. Now we are in the 200 mm reticle development phase. We have curried out experiments in cleaning, inspection and repair for the EB reticle, which are very important issues for the EB reticle fabrication. We showed possibilities of Ar aerosol cleaning, a reticle repair using Focused Ion Beam, pattern defect inspection with DUV microscope and so on.

Paper Details

Date Published: 11 March 2002
PDF: 9 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458254
Show Author Affiliations
Norihiro Katakura, Nikon Corp. (Japan)
Shin-ichi Takahashi, Nikon Corp. (Japan)
Masashi Okada, Nikon Corp. (Japan)
Sumito Shimizu, Nikon Corp. (Japan)
Shintaro Kawata, Nikon Corp. (Japan)


Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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