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Proceedings Paper

120x90 element thermopile array fabricated with CMOS technology
Author(s): Masaki Hirota; Yasushi Nakajima; Masanori Saito; Fuminori Satou; Makato Uchiyama
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Paper Abstract

This paper presents the first-ever 120×90 element thermoelectric IR focal plane array (FPA) fabricated wiht CMOS technology. The device has a high repsonsivity of 3,900 V/W and a low cost potential. The overall chip size is 14.4 mm × 11.0 mm with a 12.0 mm × 9.0 mm imaging area. The device structure was optimzed for a vacuum-sealed package. Each detector consists of two pairs of p-n polysilicon thermocouples and an NMOS transistor and has external dimensions of 100μm x 100μm and an internal electrical resistance of 90kΩ. The precisely patterned Au-black IR absorbing layer was achieved by both a low-pressure vapor deposition technique and a lift-off technique utilizing a PSG sacrificial layer. These techniques make it possible to obtain a Au-black pattern with the same degree of accuracy as with the CMOS process. The Au-black layer showed high absorpitivty of more than 90 percent to the light source with a wavelength of from 8 to 13μm. This performance is suitable for consumer electronics as well as automotive applications.

Paper Details

Date Published: 23 January 2003
PDF: 11 pages
Proc. SPIE 4820, Infrared Technology and Applications XXVIII, (23 January 2003); doi: 10.1117/12.457719
Show Author Affiliations
Masaki Hirota, Nissan Motor Co., Ltd. (Japan)
Yasushi Nakajima, Nissan Motor Co., Ltd. (Japan)
Masanori Saito, Nissan Motor Co., Ltd. (Japan)
Fuminori Satou, Nissan Motor Co., Ltd. (Japan)
Makato Uchiyama, Nissan Motor Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 4820:
Infrared Technology and Applications XXVIII
Bjorn F. Andresen; Gabor F. Fulop; Marija Strojnik, Editor(s)

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