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Proceedings Paper

Epitaxial strain effects on superconducting and transport properties of La2-xSrxCuO4+deltasign
Author(s): Xiaoxing Xi; Weidong Si; X. H. Zeng; A. Soukiassian; C. L. Jia; K. Urban
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Paper Abstract

Epitaxial strain in La2-xSrxCuO4+δ thin films (0 ⩽ x ⩽ 0.30) is controlled by using SrLaAlO4 buffer layers of different thicknesses on SrTiO3 substrates. We found that compressive epitaxial strain results in higher Tc for all the Sr concentrations. Better oxygenation by cooling the films in ozone/molecular oxygen mixture also leads to higher Tc. In undoped and lightly-doped ultrathin films, the samples are insulating under tensile strain, but superconducting when the strain is sufficiently compressive. We suggest that the epitaxial strain affects the insertion of interstitial oxygen, which is responsible for the observed effects. Hall measurements confirm the change in carrier density in films of different strain. The Hall angle also changes with epitaxial strain. The epitaxial strain dependence of the slope in the T2 dependence of the cotangent of the Hall angle is different for underdoped and optimally-doped samples.

Paper Details

Date Published: 7 November 2002
PDF: 10 pages
Proc. SPIE 4811, Superconducting and Related Oxides: Physics and Nanoengineering V, (7 November 2002); doi: 10.1117/12.457583
Show Author Affiliations
Xiaoxing Xi, The Pennsylvania State Univ. (United States)
Weidong Si, The Pennsylvania State Univ. (United States)
X. H. Zeng, The Pennsylvania State Univ. (United States)
A. Soukiassian, The Pennsylvania State Univ. (United States)
C. L. Jia, Forschungszentrum Juelich GmbH (Germany)
K. Urban, Forschungszentrum Juelich GmbH (Germany)

Published in SPIE Proceedings Vol. 4811:
Superconducting and Related Oxides: Physics and Nanoengineering V
Ivan Bozovic; Davor Pavuna, Editor(s)

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