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Proceedings Paper

Sol-gel-deposited Sb-doped SnO2 as transparent anode for OLED: process, patterning, and hole injection characteristics
Author(s): David Vaufrey; M. Ben Khelifa; Marie-Paule Besland; C. Sandu; Marie-Genevieve Blanchin; Valentin S. Teodorescu; Jean-Alain Roger; Jacques Tardy
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Paper Abstract

This paper reports on the potentialities of sol-gel deposited Sb doped SnO2(T)) as a new transparent conducting oxide (TCO) for anode in organic light emitting diodes (OLED). Multilayered films with transparency over 85% and resistivity lower than 5 103(Omega) -cm were obtained. Structural observations by Transmission Electron Microscopy (TEM) show that the films are nanocrystallized. Smaller and more uniform grains are obtained upon rapid thermal annealing. Atomic Force Microscopy (AFM) imaging shows the surface roughness does not exceed 20 A. TO films are very stable and cannot be chemically etched. Anode patterning by reactive ion etching (RIE) in a Methane- Hydrogen plasma has been experienced and is described. Typical etching around 250 A/min were obtained. TO/PEDOT/PVK/Al hole only diodes were realized to assess sol gel TO films as hole injection electrodes. Devices with threshold voltages of 6 volts were obtained. A comparison with ITO deposited by low temperature cathodic sputtering is given.

Paper Details

Date Published: 27 February 2002
PDF: 10 pages
Proc. SPIE 4464, Organic Light-Emitting Materials and Devices V, (27 February 2002); doi: 10.1117/12.457464
Show Author Affiliations
David Vaufrey, Ecole Centrale de Lyon (France)
M. Ben Khelifa, Ecole Centrale de Lyon (France)
Marie-Paule Besland, Ecole Centrale de Lyon (France)
C. Sandu, Univ. Claude Bernard (France)
Marie-Genevieve Blanchin, Univ. Claude Bernard (France)
Valentin S. Teodorescu, Univ. Claude Bernard (Romania)
Jean-Alain Roger, Univ. Claude Bernard (France)
Jacques Tardy, Ecole Centrale de Lyon (France)

Published in SPIE Proceedings Vol. 4464:
Organic Light-Emitting Materials and Devices V
Zakya H. Kafafi, Editor(s)

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