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Proceedings Paper

Semiconductor quantum-dot lasers and amplifiers
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Paper Abstract

We have produced GaAs-based quantum-dot edge-emitting lasers operating at 1.16 μm with record-low transparency current, high output power, and high internal quantum efficiencies. We have also realized GaAs-based quantum-dot lasers emitting at 1.3 μm, both high-power edge emitters and low-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth.

Paper Details

Date Published: 4 December 2002
PDF: 11 pages
Proc. SPIE 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems, (4 December 2002); doi: 10.1117/12.457282
Show Author Affiliations
Jorn M. Hvam, Technical Univ. of Denmark (Denmark)
Paola Borri, Technical Univ. of Denmark (Denmark)
Nikolai N. Ledentsov, Technische Univ. Berlin (Germany)
Dieter Bimberg, Technische Univ. Berlin (Germany)

Published in SPIE Proceedings Vol. 4871:
Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems
Richard P. Mirin; Carmen S. Menoni, Editor(s)

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