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Proceedings Paper

Monolithically integrated tunable laterally coupled distributed feedback lasers with self-aligned Ti/Pt/Au ohmic contacts
Author(s): Rupert Schreiner; Peter Naegele; Michael Koerbl; Albert Groening; Jean-Louis Gentner; Heinz Schweizer
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Paper Abstract

We present a new method for fabrication of tunable InGaAsP-InP single mode lasers without epitaxial overgrowth. These devices show the advantage of a considerably simplified fabrication process compared to conventional tunable laser types. The lasers comprise an active Bragg reflector integrated with an uncorrugated separately pumped gain region. To overcome the extensive and expensive overgrowth step we realized a surface grating on both sides of the ridge mesa, which provides DFB operation. By adjusting the current through the Bragg reflector, the wavelength can be tuned between 1590.8 nm and 1595.2 nm. A maximum of 11 wavelength channels with an average spacing of ~0.5 nm and a constant optical output power of ~0.5 mW are addressable.

Paper Details

Date Published: 4 December 2002
PDF: 7 pages
Proc. SPIE 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems, (4 December 2002); doi: 10.1117/12.457281
Show Author Affiliations
Rupert Schreiner, Infineon Technologies AG (Germany)
Univ. Stuttgart (Germany)
Peter Naegele, Univ. Stuttgart (Germany)
Michael Koerbl, Univ. Stuttgart (Germany)
Albert Groening, Univ. Stuttgart (Germany)
Jean-Louis Gentner, Alcatel (France)
Heinz Schweizer, Univ. Stuttgart (Germany)


Published in SPIE Proceedings Vol. 4871:
Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems
Richard P. Mirin; Carmen S. Menoni, Editor(s)

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