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Proceedings Paper

Effects of p/n inhomogeneity on CdZnTe radiation detectors
Author(s): Muren Chu; Sevag Terterian; David Ting; Ralph B. James; Marek Szawlowski; Gerald J. Visser
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Paper Abstract

Spectrometer grade, room-temperature radiation detectors have been produced on Cd0.90Zn0.10Te grown by the low-pressure Bridgman technique. Small amount of indium has been used to compensate the uncompensated Cd vacancies for the crystals to be semi-insulating. The properties of the detectors are critically dependent on the amount of excess Te introduced into the growth melts of the Cd0.90Zn0.10Te crystals and the best detectors are fabricated from crystals grown with 1.5% excess Te. Detector resolution 57Co and 241Am radiation peaks are observed on all detectors expect the ones produced on Cd0.90Zn0.10Te grown from the melt in the stoichiometric condition. The lack of resolution of these stoichiometric grown detectors is explained by a p/n conduction-type inhomogeneity model.

Paper Details

Date Published: 10 January 2003
PDF: 7 pages
Proc. SPIE 4784, X-Ray and Gamma-Ray Detectors and Applications IV, (10 January 2003); doi: 10.1117/12.457056
Show Author Affiliations
Muren Chu, Fermionics Corp. (United States)
Sevag Terterian, Fermionics Corp. (United States)
David Ting, Fermionics Corp. (United States)
Ralph B. James, Brookhaven National Lab. (United States)
Marek Szawlowski, Advanced Photonix, Inc. (United States)
Gerald J. Visser, NOVA R&D, Inc. (United States)


Published in SPIE Proceedings Vol. 4784:
X-Ray and Gamma-Ray Detectors and Applications IV
Ralph B. James; Larry A. Franks; Arnold Burger; Edwin M. Westbrook; Roger D. Durst; Edwin M. Westbrook; Roger D. Durst, Editor(s)

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