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Proceedings Paper

Enhancement in ZnS:Mn triboluminescent film intensity using ZnO films as buffer layers
Author(s): Boateng Onwoma-Agyemann; Chao-Nan Xu; S.W. Shi; Xu-Guang Zheng; Morio Suzuki
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Paper Abstract

We have investigated the effect of ZnO films used as buffer layers on the triboluminescence (TrL) intensity of ZnS:Mn thin films on quartz substrates using RF magnetron sputtering method and annealing technique. Highly oriented film of ZnO was firstly deposited on quartz glass substrate and then the ZnS:Mn film was successfully deposited on the ZnO film with orientation. By annealing at 5% H2 in Ar ambient, the crystallinity of both ZnO and ZnS:Mn films was increased. It was found that the addition of the ZnO buffer layer greatly improve the TrL intensity of the ZnS:Mn films.

Paper Details

Date Published: 22 February 2002
PDF: 7 pages
Proc. SPIE 4576, Advanced Environmental Sensing Technology II, (22 February 2002); doi: 10.1117/12.456955
Show Author Affiliations
Boateng Onwoma-Agyemann, National Institute of Advanced Industrial Science and Saga Univ. (Japan)
Chao-Nan Xu, National Institute of Advanced Industrial Science and Technology, Kyushu (Japan)
S.W. Shi, National Institute of Advanced Industrial Science and Technology, Kyushu (Japan)
Xu-Guang Zheng, Saga Univ. (Japan)
Morio Suzuki, Saga Univ. (Japan)


Published in SPIE Proceedings Vol. 4576:
Advanced Environmental Sensing Technology II
Tuan Vo-Dinh; Stephanus Buettgenbach, Editor(s)

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