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Proceedings Paper

GaN micromachining by short wavelength pulsed laser irradiation
Author(s): Toshimitsu Akane; Koji Sugioka; Kotaro Obata; Naoko Aoki; Koichi Toyoda; Katsumi Midorikawa
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Paper Abstract

GaN ablative etching using coaxial irradiation of KrF excimer laser and F2 laser has been explored. The etching process is consisted of pulsed laser ablation and successive acid treatment. Single pulse ablation using KrF excimer planarizes etched surface, however, multiple KrF irradiation roughens etched surface significantly. Small fraction of F2 laser simultaneously irradiated with KrF excimer laser improves surface roughness caused in the case of single-KrF irradiation. Irradiating delay time between both lasers is varied in order to investigate excitation mechanism as well as find optimum irradiation condition.

Paper Details

Date Published: 25 February 2002
PDF: 4 pages
Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); doi: 10.1117/12.456899
Show Author Affiliations
Toshimitsu Akane, RIKEN-The Institute of Physical and Chemical Research (Japan)
Koji Sugioka, RIKEN-The Institute of Physical and Chemical Research (Japan)
Kotaro Obata, Science Univ. of Tokyo (Japan)
Naoko Aoki, Science Univ. of Tokyo (Japan)
Koichi Toyoda, Science Univ. of Tokyo (Japan)
Katsumi Midorikawa, RIKEN-The Institute of Physical and Chemical Research (Japan)


Published in SPIE Proceedings Vol. 4426:
Second International Symposium on Laser Precision Microfabrication

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