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Proceedings Paper

Synthesis of pure C40 TiSi2 for Si wafer fabrication
Author(s): S. Y. Chen; Zexiang Shen; S. Y. Xu; Alex K. See; Lap Hung Chan; Wen Shen Li
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Paper Abstract

A simple and novel salicidation process applying pulsed laser annealing as the first annealing step was used to induce TiSi2 formation. Both Raman spectroscopy and transmission electron microscope results confirm the formation of a new phase of Ti disilicide, the pure C40 TiSi2 after laser irradiation. Direct C54 phase growth on the basis of C40 template bypassing the C49 phase is accomplished at the second annealing temperature as low as 600 degree(s)C. Line width independent formation of the C54 phase was observed on patterned wafers using this salicidation process and fine line effect is thus eliminated.

Paper Details

Date Published: 25 February 2002
PDF: 4 pages
Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); doi: 10.1117/12.456893
Show Author Affiliations
S. Y. Chen, National Univ. of Singapore (Singapore)
Zexiang Shen, National Univ. of Singapore (Singapore)
S. Y. Xu, National Univ. of Singapore (Singapore)
Alex K. See, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Lap Hung Chan, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Wen Shen Li, Chartered Semiconductor Manufacturing Ltd. (Singapore)

Published in SPIE Proceedings Vol. 4426:
Second International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Yong Feng Lu; Koji Sugioka; Jan J. Dubowski, Editor(s)

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