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Proceedings Paper

Ultrafast laser-induced crystallization of amorphous silicon films
Author(s): Taeyul Choi; David J. Hwang; Constantine P. Grigoropoulos
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Paper Abstract

Ultra-short pulsed laser irradiation was used to crystallize an a-Si film with a laser fluence of 0.12 J/cm2. The crystallization process was observed by time-resolved pump- and-probe imaging in the range of 0.2 ps to 100 ns. Reflectivity data along with post-processed SEM pictures provide evidence for a non-thermal ultra-fast solid-phase transition. A crystallization sequence based on atomic self- diffusion is suggested.

Paper Details

Date Published: 25 February 2002
PDF: 4 pages
Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); doi: 10.1117/12.456891
Show Author Affiliations
Taeyul Choi, Univ. of California/Berkeley (United States)
David J. Hwang, Univ. of California/Berkeley (United States)
Constantine P. Grigoropoulos, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 4426:
Second International Symposium on Laser Precision Microfabrication

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