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Proceedings Paper

Film growth on single MgO and SiO2 covered Si substrate by pulsed laser deposition
Author(s): Ying Su; Jing Zhao; Li Lu; Man On Lai; Wen Dong Song; Yongfeng Lu
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Paper Abstract

STO and subsequent YBCO thin films with different orientations have been grown on a single crystal MgO (100) substrate as well as a MgO on a 400nm amorphous SiO2 covered Si (100) substrate using pulsed laser deposition (PLD) technique. Cross-sectional transmission electron microscopy (TEM) showed an epitaxial growth of highly c-axis oriented YBCO(001)/STO(100) on a single crystal MgO(100). TEM investigation on MgO/SiO2 and MgO indicating interfacial reaction between SiO2 and MgO. Chemical reaction may be possible at the interface when films are hold at high temperature based on the calculation of Gibbs free energy. Auger electron spectroscopy (AES) showed that an uphill diffusion of Ba from YBCO occurred during deposition and post thermal treatment processes.

Paper Details

Date Published: 25 February 2002
PDF: 4 pages
Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); doi: 10.1117/12.456874
Show Author Affiliations
Ying Su, National Univ. of Singapore (Singapore)
Jing Zhao, Singapore/MIT Alliance Programme (Singapore)
Li Lu, National Univ. of Singapore and Singapore/MIT Alliance Programme (Singapore)
Man On Lai, National Univ. of Singapore (Singapore)
Wen Dong Song, Data Storage Institute (Singapore)
Yongfeng Lu, Data Storage Institute (United States)


Published in SPIE Proceedings Vol. 4426:
Second International Symposium on Laser Precision Microfabrication

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