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Proceedings Paper

Orientation dependence of kinetics of laser-induced liquid-solid phase transitions in A3B5 single crystals
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Paper Abstract

The phase transitions in A3B5 single crystals have been studied. GaAs, GaSb and InSb wafers oriented in (100) and (111) plains were irradiated by ruby (80 ns FWHM) and ArF excimer (10 ns, (lambda) equals193 nm) lasers. Dependence of melt duration (tau) on the irradiation energy density W was measured. The values of (tau) were determined from the time-resolved reflectivity measurements (TRR) at (lambda) equals1.06 (ruby laser) and 0.63 micrometers (ArF). The average discrepancies between (tau) 100 and (tau) 111 established for each semiconductor are related to somewhat slower velocity of crystal growth in <111> direction epitaxial process in this direction is characterized by lower crystallization temperature Tcr and by larger undercooling of the liquid phase. The values of Tcr(100) and Tcr(100) for InSb can differ by almost 10%. Increase in difference between (tau) 111 and (tau) 100 values going from GaAs to GaSb and to InSb correlates with the decrease in interface temperature and with the increase of average atomic mass, i.e., with the reduction of mobility and diffusion of atoms (ions) in binary melt.

Paper Details

Date Published: 25 February 2002
PDF: 3 pages
Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); doi: 10.1117/12.456866
Show Author Affiliations
Elena I. Gatskevich, Institute of Electronics (Belarus)
Gennadii D. Ivlev, Institute of Electronics (Belarus)


Published in SPIE Proceedings Vol. 4426:
Second International Symposium on Laser Precision Microfabrication

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