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Proceedings Paper

High-resolution laser flash photography for probing the solidification of the new double laser recrystallization process
Author(s): Ming-Hong Lee; Seung-Jae Moon; Mutsuko Hatano; Constantine P. Grigoropoulos
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Paper Abstract

A new double laser recrystallization technique that can produce lateral grains of tens of micrometers is presented. A nanosecond laser (excimer or Nd:YLF laser) and a pulse modulated ArPLU laser are used in the experiment. The effect of different parameters on lateral grain growth is investigated. These parameters include the time delay between the two lasers, the excimer laser fluence, the ArPLU laser power and the pulse duration. This process has wide process window and is insensitive to both the excimer laser fluence and the ArPLU laser power fluctuations. Preheating and melting of the a-Si film with the ArPLU laser before firing the excimer laser is found to be necessary for inducting lateral grain growth. The transient excimer laser irradiation is believed to generate nucleation sites for initiating the subsequent lateral grain growth. The solidification dynamics of the process is probed by high spatial and temporal resolution laser flash photography. A lateral solidification velocity of about 10m/s observed.

Paper Details

Date Published: 25 February 2002
PDF: 4 pages
Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); doi: 10.1117/12.456858
Show Author Affiliations
Ming-Hong Lee, Univ. of California/Berkeley (United States)
Seung-Jae Moon, Univ. of California/Berkeley (United States)
Mutsuko Hatano, Hitachi, Ltd. (United States)
Constantine P. Grigoropoulos, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 4426:
Second International Symposium on Laser Precision Microfabrication

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