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Proceedings Paper

Temperature effect for exciton dynamics in ZnCdSe/ZnSe QWs
Author(s): JiNan Zeng; Yongfeng Lu; Yasuo Oka
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Paper Abstract

Temperature dependence of photoluminescence (PL) from Zn1-xCdxSe/ZnSe Asymmetric Double Quantum Wells (ADQWs) has been studied by using time-resolved spectroscopy. With raising temperature, the different transient behaviors of exciton emission are observed. In the regime of T<40K, the linear increase of lifetimes in both QWs with temperature is interpreted according to J. Feldmann's theory. On the other hand, the nonradiative recombination process leads to decreases of lifetimes and intensities of the NW and WW excitons in the regime of T>40K. The faster decrease of lifetime of the NW exciton is assigned to the thermal-tunneling processes comparing to that of WW exciton. The thermal-tunneling process results from the electron-hole tunneling process due to the enhancement of ionization of exciton with raising temperature. The rate equations including thermal tunneling process are used to explain the experimental data.

Paper Details

Date Published: 25 February 2002
PDF: 4 pages
Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); doi: 10.1117/12.456856
Show Author Affiliations
JiNan Zeng, National Univ. of Singapore (Singapore)
Yongfeng Lu, National Univ. of Singapore (United States)
Yasuo Oka, Tohoku Univ. (Japan)

Published in SPIE Proceedings Vol. 4426:
Second International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Yong Feng Lu; Koji Sugioka; Jan J. Dubowski, Editor(s)

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