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Proceedings Paper

Electron cyclotron resonance plasma-assisted pulsed laser deposition of carbon nitride thin films
Author(s): Wei Shi; JiaDa Wu; Jian Sun; Hao Ling; Zhifeng Ying; Zhuying Zhou; Fuming Li
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Paper Abstract

We have prepared carbon nitride thin films by using plasma assisted pulsed laser deposition. In this method, a graphite target was ablated by laser pulses in the environment of a nitrogen plasma generated from electron cyclotron resonance microwave discharge in pure nitrogen gas, while the growing film was simultaneously bombarded by the plasma stream. The deposited films were characterized by Rutherford backscattering spectroscopy (RBS), Fourier transform infrared (FTIR) spectroscopy, and Raman Spectroscopy. Films consisting purely of carbon and nitrogen with nitrogen content over at.50% were obtained on Si (100) substrates at low deposition temperatures (<80 degree(s)C). N atoms in the as-prepared films were found to be bound to C atoms through hybridized sp2 and sp3 configurations. A strong influence of substrate bias voltage on the composition and bonding configuration in the films as well as on the deposition rate was observed.

Paper Details

Date Published: 25 February 2002
PDF: 4 pages
Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); doi: 10.1117/12.456844
Show Author Affiliations
Wei Shi, Fudan Univ. (China)
JiaDa Wu, Fudan Univ. (China)
Jian Sun, Fudan Univ. (China)
Hao Ling, Fudan Univ. (China)
Zhifeng Ying, Fudan Univ. (China)
Zhuying Zhou, Fudan Univ. (China)
Fuming Li, Fudan Univ. (China)


Published in SPIE Proceedings Vol. 4426:
Second International Symposium on Laser Precision Microfabrication

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