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Proceedings Paper

Gallium nitride films synthesized by reactive pulsed laser deposition from a GaAs target
Author(s): Jian Sun; JiaDa Wu; Hao Ling; Wei Shi; Zhifeng Ying; Xunmin Ding; Zhuying Zhou; Fuming Li
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Paper Abstract

We demonstrated the feasibility of the growth of GaN thin films from polycrystalline GaAs using reactive pulsed laser deposition. The films were grown on Si (100) substrates at temperatures lower than 80 degree(s)C. A bulk of polycrystalline GaAs was used as a target. Reactive nitrogen plasma was provided by electron cyclotron resonance (ECR) microwave discharge in pure nitrogen gas to assist the film growth. Composition analysis showed that the grown films are slightly N-rich, and arsenic can hardly be detected. A strong absorption peak corresponding to Ga-N stretching vibration in the hexagonal-type GaN crystals is clearly resolved from the IR absorption spectrum. The films exhibit transparency in the visible and near-IR regions. The band gap of the films was determined to be about 3.4eV. when excited by 325-nm light at 10.2 K, the grown films luminesce in the blue region.

Paper Details

Date Published: 25 February 2002
PDF: 4 pages
Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); doi: 10.1117/12.456843
Show Author Affiliations
Jian Sun, Fudan Univ. (China)
JiaDa Wu, Fudan Univ. (China)
Hao Ling, Fudan Univ. (China)
Wei Shi, Fudan Univ. (China)
Zhifeng Ying, Fudan Univ. (China)
Xunmin Ding, Fudan Univ. (China)
Zhuying Zhou, Fudan Univ. (China)
Fuming Li, Fudan Univ. (China)


Published in SPIE Proceedings Vol. 4426:
Second International Symposium on Laser Precision Microfabrication

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