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Proceedings Paper

Wavelength dependence of laser cleaning for field emitter arrays
Author(s): Mikio Takai; Naoki Suzuki; Oguz Yavas; Akihiko Hosono; Soichiro Okuda
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Paper Abstract

Different harmonics of the Nd:YLF laser, ranging from infrared to ultraviolet wavelength region ((lambda) equals1047, 523, and 349 nm), were used for cleaning of Nb-gated silicon field emitter tips to improve the emission efficiency. An increase of the emission current by a factor of 5 after laser irradiation was observed only in case of ultraviolet laser irradiation at (lambda) equals349 nm, indicating that contaminants were successfully removed from the tip surface and the cleaning process was strongly wavelength dependent.

Paper Details

Date Published: 25 February 2002
PDF: 6 pages
Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); doi: 10.1117/12.456820
Show Author Affiliations
Mikio Takai, Osaka Univ. (Japan)
Naoki Suzuki, Osaka Univ. (Japan)
Oguz Yavas, Osaka Univ. (Japan)
Akihiko Hosono, Mitsubishi Electric Corp. (Japan)
Soichiro Okuda, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 4426:
Second International Symposium on Laser Precision Microfabrication

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