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Proceedings Paper

Charge limitation effects in emission from semiconductor photocathodes at inhomogeneous excitation
Author(s): Boris I. Reznikov; Arsen V. Subashiev
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Paper Abstract

Photoemission from a semiconductor with negative electron affinity surface is investigated theoretically for the case of local excitation regime and Gaussian distribution of the light intensity over a sample surface. While the maximum emission current is an exponential function of the negative electron affinity value, the inhomogeneous intensity distribution results in smoothed dependence of the emission current on the light intensity in the region of maximum current. The relaxation processes to the stationary emission and the cathode restoring time are found to be less sensitive to light non-homogeneity due to photovoltage level over the surface.

Paper Details

Date Published: 18 February 2002
PDF: 4 pages
Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); doi: 10.1117/12.456293
Show Author Affiliations
Boris I. Reznikov, A. F. Ioffe Physico-Technical Institute (Russia)
Arsen V. Subashiev, St. Petersburg State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 4627:
Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering

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