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Proceedings Paper

Improved strained GaAsP photocathodes
Author(s): Yuri A. Mamaev; Arsen V. Subashiev; Yuri P. Yashin; Anton N. Ambrajei; Alexander V. Rochansky
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Paper Abstract

The parameters of spin-polarized electron photocathode based on strained layer GaAs0.95P0.05/GaAs0.7P0.3 structure have been improved on the base of X-ray, Raman and polarized photoluminescence studies of such structure. The polarization maximum value 86% in conjunction with Y equals 0.16% makes such cathodes one of the best no matter where.

Paper Details

Date Published: 18 February 2002
PDF: 4 pages
Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); doi: 10.1117/12.456285
Show Author Affiliations
Yuri A. Mamaev, St. Petersburg State Technical Univ. (Russia)
Arsen V. Subashiev, St. Petersburg State Technical Univ. (Russia)
Yuri P. Yashin, St. Petersburg State Technical Univ. (Russia)
Anton N. Ambrajei, St. Petersburg State Technical Univ. (Russia)
Alexander V. Rochansky, St. Petersburg State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 4627:
Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering

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