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Proceedings Paper

New superlattices for spin-polarized electron sources
Author(s): Yuri A. Mamaev; Arsen V. Subashiev; Yuri B. Bolkhovityanov; Aleksandr I. Toropov; Askhat K. Bakharov; Mikhail A. Revenko; Alexander M. Gilinskii; Yuri P. Yashin; Anton N. Ambrajei; Alexander V. Rochansky
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Paper Abstract

We report the results on polarized electron emission from a new strained InGaAlAs/AlGaAs superlattices with an enlarged band gap, modulation doping and an optimized last GaAs layer. The yield and polarization measurements show that this structure delivers more than 0.1% quantum yield at the maximum of the polarization spectrum, the maximum polarization degree being equal to 80% at room temperature. These values present a 10-fold improvement in the quantum yield over that of the previously designed InAlGaAs-AlGaAs superlattices at the same vacuum conditions.

Paper Details

Date Published: 18 February 2002
PDF: 3 pages
Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); doi: 10.1117/12.456274
Show Author Affiliations
Yuri A. Mamaev, St. Petersburg State Technical Univ. (Russia)
Arsen V. Subashiev, St. Petersburg State Technical Univ. (Russia)
Yuri B. Bolkhovityanov, Institute of Semiconductor Physics (Russia)
Aleksandr I. Toropov, Institute of Semiconductor Physics (Russia)
Askhat K. Bakharov, Institute of Semiconductor Physics (Russia)
Mikhail A. Revenko, Institute of Semiconductor Physics (Russia)
Alexander M. Gilinskii, Institute of Semiconductor Physics (Russia)
Yuri P. Yashin, St. Petersburg State Technical Univ. (Russia)
Anton N. Ambrajei, St. Petersburg State Technical Univ. (Russia)
Alexander V. Rochansky, St. Petersburg State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 4627:
Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering

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