Share Email Print
cover

Proceedings Paper

Computer simulation and SIMS profiling of Zn implantation in A3B5 semiconductors
Author(s): Boris J. Ber; A. P. Kovarsy; Alexander A. Schmidt; Yuri V. Trushin; Evgeni E. Zhurkin; Fedor A. Krusenstern
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The method for the determination of the impurity displacement threshold energy in semiconductor heterostructures is further developed. New experimental samples for this method are proposed. Important parameters for the samples are defined. Also, simulation of the sputtering of wide impurity depth profiles is carried out. Improved values for the penetration lengths of Zn atoms with different impact energies in GaAs were found.

Paper Details

Date Published: 18 February 2002
PDF: 4 pages
Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); doi: 10.1117/12.456262
Show Author Affiliations
Boris J. Ber, A.F. Ioffe Physico-Technical Institute (Russia)
A. P. Kovarsy, A.F. Ioffe Physico-Technical Institute (Russia)
Alexander A. Schmidt, St. Petersburg State Technical Univ. (Russia)
Yuri V. Trushin, A.F. Ioffe Physico-Technical Institute and St. Petersburg State Technical Univ. (Russia)
Evgeni E. Zhurkin, A.F. Ioffe Physico-Technical Institute (Russia)
Fedor A. Krusenstern, St. Petersburg State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 4627:
Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering

© SPIE. Terms of Use
Back to Top