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Proceedings Paper

Nucleation of SiC on Si and their relationship to nano-dot formation: II. Theoretical investigation
Author(s): Kirill L. Safonov; Dmitri V. Kulikov; Yuri V. Trushin; Joerg Pezoldt
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Paper Abstract

The processes of SiC clusters growth on Si(111) surface has been investigated theoretically. The SiC cluster formation and growth on Si surface stimulated by deposition of elemental carbon onto Si(111) with molecular beams have been studied by applying the kinetic equations (co-called rate equations) method. The simulated cluster size distribution function obtained within this method appeared to be in reasonable agreement with the experimental data. Obtained cluster capture rates agree with KMC investigations.

Paper Details

Date Published: 18 February 2002
PDF: 5 pages
Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); doi: 10.1117/12.456260
Show Author Affiliations
Kirill L. Safonov, St. Petersburg State Technical Univ. (Russia)
Dmitri V. Kulikov, A.F. Ioffe Physico-Technical Institute (Russia)
Yuri V. Trushin, St. Petersburg State Technical Univ. and A.F. Ioffe Physico-Technical Institute (Russia)
Joerg Pezoldt, Technische Univ. Ilmenau (Germany)


Published in SPIE Proceedings Vol. 4627:
Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering

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