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Proceedings Paper

Nucleation of SiC on Si and their relationship to nano-dot formation: I. Experimental investigations
Author(s): F. Scharmann; Joerg Pezoldt
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Paper Abstract

Using in situ reflection high energy electron diffraction (RHEED), ex situ atomic force microscopy (AFM) and transmission electron microscopy (TEM) the nucleation behavior of silicon carbide on silicon during the interaction of elemental carbon with silicon surfaces was investigated. The critical island sizes and the growth mechanisms leading to nano-dot formation were determined.

Paper Details

Date Published: 18 February 2002
PDF: 5 pages
Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); doi: 10.1117/12.456259
Show Author Affiliations
F. Scharmann, Technische Univ. Ilmenau (Germany)
Joerg Pezoldt, Technische Univ. Ilmenau (Germany)


Published in SPIE Proceedings Vol. 4627:
Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering

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