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Proceedings Paper

Influence of native defects on formation absorption spectra of InP[Fe] crystals
Author(s): Vladimir P. Saveliev; Mikhail A. Pogarsky; Vladimir V. Romanov; Alexander E. Vasiliev; Sergei A. Starovoitov
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Paper Abstract

Optical absorption measurements have been carried out on semi-insulating and n-type InP:Fe, InP:Sn. The optical absorption spectra of InP:Fe contain several broad structure-free bands due to charge conduction between Fe ions and band states. However, in the case of InP high doped with Sn, the same absorption band with threshold at 0.64 eV was detected. It is usually attributed to the excitation of electrons from the ground state of one electron trap Fe2+ to the (Gamma) -point conduction band minimum. The spectral photo-ionization cross-section approximation is made on the basis of a phenomenological model for an admixture center with an attracting (delta) -potential in the vicinity of the admixture and Coulomb potential at large distances. A weak electron-phonon interaction is taken into account. High quality of approximation was found. The analysis of the absorption spectra and ionization energies allows to expect that absorption zone with the threshold 0.64 eV occurs due to deep ionized acceptors that are charged indium vacancies.

Paper Details

Date Published: 18 February 2002
PDF: 3 pages
Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); doi: 10.1117/12.456250
Show Author Affiliations
Vladimir P. Saveliev, St. Petersburg State Technical Univ. (Russia)
Mikhail A. Pogarsky, St. Petersburg State Technical Univ. (Russia)
Vladimir V. Romanov, St. Petersburg State Technical Univ. (Russia)
Alexander E. Vasiliev, St. Petersburg State Technical Univ. (Russia)
Sergei A. Starovoitov, St. Petersburg State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 4627:
Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering

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