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Proceedings Paper

Nernst-Ettingshausen effect in the hopping condition range: experiment and theory for Pb1-xSnxTe doped with In
Author(s): Sergei A. Nemov; Yuri I. Ravich
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Paper Abstract

In this contribution we report on Nernst-Ettingshausen effect, electrical conductivity, thermoelectric power, and Hall effect in the temperature range from 77 to 400 K for solid solution (Pb0.78Sn0.22)Te with In dopant impurity. Nernst-Ettingshausen coefficient Q exhibits properties unusual for IV-VI materials. It has positive sign and decreases rapidly with an increasing temperature. A theoretical model, taking into account hopping conductivity along strongly localized electronic states of In impurity is suggested. The model gives a good agreement with experimental data.

Paper Details

Date Published: 18 February 2002
PDF: 7 pages
Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); doi: 10.1117/12.456244
Show Author Affiliations
Sergei A. Nemov, St. Petersburg State Technical Univ. (Russia)
Yuri I. Ravich, St. Petersburg State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 4627:
Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering

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