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Proceedings Paper

Feshbach resonances in Si-, Ge-, and Sn- negative ion photodetachment
Author(s): Vadim K. Ivanov; Galina Yu. Kashenock; Constantin V. Lapkin
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Paper Abstract

A new improved study of resonance features has been made in the photodetachment process from such strong correlated system as negative ions with np3 half-filled shells. The photodetachment cross sections from two outer shells of Si-, Ge- and Sn- negative ions have been calculated with account of many electron correlations. The formation and autodetachment of the quasi-bound 'nsnp4' states revealed themselves as a very sensitive interference structure in the cross section.

Paper Details

Date Published: 18 February 2002
PDF: 6 pages
Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); doi: 10.1117/12.456242
Show Author Affiliations
Vadim K. Ivanov, St. Petersburg State Technical Univ. (Russia)
Galina Yu. Kashenock, St. Petersburg State Technical Univ. (Russia)
Constantin V. Lapkin, St. Petersburg State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 4627:
Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering

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