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Proceedings Paper

Epitaxial films YBa2Cu3O7-delta(jc(78K)<106A/cm2) on sapphire and SrTiO3: peculiarities and differences in conditions of film growth and properties
Author(s): Mikhail R. Predtechensky; A. N. Smal'; Yury D. Varlamov
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Paper Abstract

The influence of technological parameters at laser deposition on YBa2Cu3O7_5 films properties, including parameters of a laser beam, oxygen pressure, substrate temperature, target-substrate distance are discussed. The relationship between optimal values of these parameters and the relationship of microstructure and transport properties of the films are shown. The importance of the initial growth stage epitaxial YBa2Cu3O7_5 films on sapphire substrate with jc(78K) < 106A/cm2 is discussed. The influence of dynamics of laser plasma expansion on film growth is demonstrated.

Paper Details

Date Published: 1 July 1991
PDF: 8 pages
Proc. SPIE 1477, Superconductivity Applications for Infrared and Microwave Devices II, (1 July 1991); doi: 10.1117/12.45616
Show Author Affiliations
Mikhail R. Predtechensky, Institute of Thermophysics (Russia)
A. N. Smal', Institute of Thermophysics (Russia)
Yury D. Varlamov, Institute of Thermophysics (Russia)


Published in SPIE Proceedings Vol. 1477:
Superconductivity Applications for Infrared and Microwave Devices II
Vernon O. Heinen; Kul B. Bhasin, Editor(s)

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