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Proceedings Paper

Atomic scale structure-property relationships of defects and interfaces in novel oxide thin films
Author(s): Susanne Stemmer
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Paper Abstract

The ability to analyze the chemistry, atomic and electronic structure of interfaces with atomic spatial resolution is afforded by modern scanning transmission electron microscopy techniques. By combining atomic resolution imaging with spectroscopy, structure-property relationships of functional oxide thin films can be established. In this paper, we describe two specific examples where we have applied high-spatial resolution electron energy-loss spectroscopy to dielectric thin films.

Paper Details

Date Published: 7 November 2002
PDF: 8 pages
Proc. SPIE 4811, Superconducting and Related Oxides: Physics and Nanoengineering V, (7 November 2002); doi: 10.1117/12.455838
Show Author Affiliations
Susanne Stemmer, Univ. of California/Santa Barbara (United States)

Published in SPIE Proceedings Vol. 4811:
Superconducting and Related Oxides: Physics and Nanoengineering V
Ivan Bozovic; Davor Pavuna, Editor(s)

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