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Proceedings Paper

Delayed emission of surface-generated trapped carriers in transient charge transport of single-crystal and polycrystalline HgI2
Author(s): Asaf Zuck; Michael M. Schieber; Oleg Khakhan; Zeev Burshtein
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Paper Abstract

Transient charge transport (TCT) measurements were used to evaluate the electrical conduction properties of HgI2 single crystals. Some comparative preliminary results for polycrystalline mercuric iodide (poly-HgI2) thick-film X-ray detectors are also reported. The latter were prepared by physical vapor deposition (PVD). The mobility , trapping time 2, and surface recombination velocity s of electrons or holes were determined by analyses of transient voltages developed across the sample in response to a drift of the corresponding charge carriers created by alpha particle absorption near one of the electrodes. Electron-, and hole mobilities of single crystal HgI2 were n = 80 cm2/V•s and p = 4.8 cm2/V•s, respectively. Trapping times were 2n ≅ 22 V and 2p ≅ 8 V, and surface recombination velocities sn ≅ 1.1 ×105 cm/s and sp ≅ 3.6 ×103 cm/s . Those of the polycrystalline material depend on the deposition technology, and vary between 65 and 88 cm2/V•s for electrons, and between 4.3 and 4.1 cm2/V•s for holes. Bulk trapping-times and surface recombination velocities appear of the same order of magnitude as in the single crystal. An effect of carriers being first generated in near-surface traps and then gradually released is observed for both the single crystal and the polycrystalline material. It is stronger for electrons as compared to holes, and stronger in the polycrystalline material as compared to the single crystal.

Paper Details

Date Published: 10 January 2003
PDF: 9 pages
Proc. SPIE 4784, X-Ray and Gamma-Ray Detectors and Applications IV, (10 January 2003); doi: 10.1117/12.455774
Show Author Affiliations
Asaf Zuck, Hebrew Univ. of Jerusalem (Israel)
Real-Time Radiography (Israel)
Michael M. Schieber, Hebrew Univ. of Jerusalem (Israel)
Real-Time Radiography (Israel)
Oleg Khakhan, Real Time Radiography (Israel)
Zeev Burshtein, Ben-Gurion Univ. of the Negev (Israel)


Published in SPIE Proceedings Vol. 4784:
X-Ray and Gamma-Ray Detectors and Applications IV
Ralph B. James; Larry A. Franks; Arnold Burger; Edwin M. Westbrook; Roger D. Durst; Edwin M. Westbrook; Roger D. Durst, Editor(s)

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