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Proceedings Paper

Photoluminescence of CdTe crystals grown by contactless PVT method
Author(s): Witold Palosz; K. Grasza; Phillip R. Boyd; Yunlong Cui; Gomez W. Wright; U. N. Roy; Arnold Burger
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Paper Abstract

High quality CdTe crystals with resistivities higher than 108 Ω cm were grown by the 'contactless' PVT technique. Group III elements In and Al, and the transition metal Sc were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. It was found that the emission peaks at 1.584 eV and 1.581 eV exist only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/indium complex. The intensity of the broadband centered at 1.43 eV decreases dramatically with introduction of Sc.

Paper Details

Date Published: 10 January 2003
PDF: 6 pages
Proc. SPIE 4784, X-Ray and Gamma-Ray Detectors and Applications IV, (10 January 2003); doi: 10.1117/12.455696
Show Author Affiliations
Witold Palosz, Universities Space Research Association (United States)
NASA Marshall Space Flight Ctr. (United States)
K. Grasza, Institute of Physics (Poland)
Phillip R. Boyd, Army Research Lab. (United States)
Yunlong Cui, Fisk Univ. (United States)
Gomez W. Wright, Yinnel Tech, Inc. (United States)
U. N. Roy, Fisk Univ. (United States)
Arnold Burger, Fisk Univ. (United States)


Published in SPIE Proceedings Vol. 4784:
X-Ray and Gamma-Ray Detectors and Applications IV
Ralph B. James; Larry A. Franks; Arnold Burger; Edwin M. Westbrook; Roger D. Durst; Edwin M. Westbrook; Roger D. Durst, Editor(s)

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