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Proceedings Paper

High-speed long-wavelength strained quantum-well lasers: theory and experiment
Author(s): Shun-Lien Chuang; Guobin Liu
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Paper Abstract

We investigate In1-xGaxAs1-yPy and In1-x-yGaxAlyAs quantum-well (QW) lasers for 1.55 μm telecommunication applications and compare their temperature dependence both theoretically and experimentally. Under steady-state (DC) electric bias, the gain and intrinsic absorption losses are measured based on the well-known Hakki-Paoli method from below threshold to threshold. The photon lifetime is obtained from this measurement. A comprehensive theoretical gain model with the realistic band structure including the valence band mixing and many-body effect is then used to fit the experimentally obtained modal gain spectra and extract the carrier density, and thus, the differential gain. We then carried out the high-speed microwave modulation measurement, and the experimental modulation response curves are fitted by the theory and the important parameters such as the differential gain and Κ factor are obtained. These high-speed differential gain agrees very well with the value obtained from the steady-state direct optical gain measurement. New experimental data on the temperature-dependent characteristics of two compressively strained lasers are then presented. The comparison of two material systems will be important to design high-bandwidth high-performance semiconductor lasers in order to meet requirements of 1.55 μm telecommunication applications.

Paper Details

Date Published: 4 December 2002
PDF: 14 pages
Proc. SPIE 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems, (4 December 2002); doi: 10.1117/12.455556
Show Author Affiliations
Shun-Lien Chuang, Univ. of Illinois/Urbana-Champaign (United States)
Guobin Liu, Univ. of Illinois/Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 4871:
Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems
Richard P. Mirin; Carmen S. Menoni, Editor(s)

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