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Proceedings Paper

Nanoscale study of polarization phenomena in Pb(Zr0.2Ti0.8)O3 thin films
Author(s): Thomas Tybell; Patrycja Paruch; Charles H. Ahn; Jean-Marc Triscone
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Paper Abstract

In this paper we discuss how atomic force microscopy can be used to locally study polarization phenomena, elucidating the fundamental properties of ferroelectrics. By combining local probe switching, time dependent electric field microscopy and piezoelectric microscopy, it is possible to address the question of ferroelectricity in ultra thin films. Using these techniques e demonstrate that Pb(Zr0.2Ti0.8)O3 films are ferroelectric down to 40Å. We also discuss the use of the ferroelectric field effect to study switching in thin samples. Furthermore, by examining with a nanometer resolution the writing and reading of ferroelectric regions, the electric field dependence of the domain wall velocity can be quantified, demonstrating that ferroelectric domain wall motion is a creep process in thin films.

Paper Details

Date Published: 7 November 2002
PDF: 10 pages
Proc. SPIE 4811, Superconducting and Related Oxides: Physics and Nanoengineering V, (7 November 2002); doi: 10.1117/12.455542
Show Author Affiliations
Thomas Tybell, Univ. of Geneva (Switzerland)
Norwegian Univ. of Science and Technology (Norway)
Patrycja Paruch, Univ. of Geneva (Switzerland)
Charles H. Ahn, Yale Univ. (United States)
Jean-Marc Triscone, Univ. of Geneva (Switzerland)

Published in SPIE Proceedings Vol. 4811:
Superconducting and Related Oxides: Physics and Nanoengineering V
Ivan Bozovic; Davor Pavuna, Editor(s)

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