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Proceedings Paper

Field effect and ferroelectric field effect in correlated oxide films
Author(s): D. Matthey; S. Gariglio; C. H. Ahn; Jean-Marc Triscone
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Paper Abstract

We repoert on ferroelectric field effect experiments in correlated oxide films, demonstrating that a reversible, nonvolatile change in the electronic properties can be obtained upon reversing the ferroelectric polarization in epitaxial heterostructures consisting of ferroelectric Pb(Zr0.2Ti0.8) O3 and metallic or superconducting oxide layers. In particular, we show that a Tc modulation of 7 K can be obtained in very thin (~20 Å) films of high Tc superconductors. We also discuss conventional field effect experiments, where we have used a SrTiO3 gate insulator to modulate the electronic properties of a thin NdBa2Cu3O7-Δ film. In this device, the dielectric constant of SrTiO3 reaches a value of 2800 at 18 K. The polarization obtained is a few μC/cm2, which induces a modulation of the resistivity of the NdBa2Cu3O7-δ layer of ~9%.

Paper Details

Date Published: 7 November 2002
PDF: 8 pages
Proc. SPIE 4811, Superconducting and Related Oxides: Physics and Nanoengineering V, (7 November 2002); doi: 10.1117/12.455539
Show Author Affiliations
D. Matthey, Univ. of Geneva (Switzerland)
S. Gariglio, Univ. of Geneva (Switzerland)
C. H. Ahn, Yale Univ. (United States)
Jean-Marc Triscone, Univ. of Geneva (Switzerland)

Published in SPIE Proceedings Vol. 4811:
Superconducting and Related Oxides: Physics and Nanoengineering V
Ivan Bozovic; Davor Pavuna, Editor(s)

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