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Proceedings Paper

Impact of alloy composition on the noise behavior of heterostructure devices at millimeter wave frequencies
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Paper Abstract

The influence of alloy composition on the noise behavior of heterostructure semiconductor devices is investigated by using a rigorous two-dimensional physical simulator. The model takes into account non-stationary transport properties and quantization effects to allow a better understanding of the carrier transport properties inside the heterostructure devices and consequently to explain the noise performance of these devices by making use of the microscopic nature of the model. As an example, the model is applied to study the effects of alloy composition and the resulting band discontinuity on the 2DEG properties and on the noise performance of Hetero-FETs at millimeter-wave frequencies, and to extract the optimum alloy composition which leads to the minimum noise figure in different frequency ranges.

Paper Details

Date Published: 27 December 2001
PDF: 8 pages
Proc. SPIE 4490, Multifrequency Electronic/Photonic Devices and Systems for Dual-Use Applications, (27 December 2001); doi: 10.1117/12.455420
Show Author Affiliations
Ali Abou-Elnour, Ajman Univ. of Science and Technology (United Arab Emirates)
Ossama A. Abo-Elnor, Ajman Univ. of Science and Technology (Egypt)


Published in SPIE Proceedings Vol. 4490:
Multifrequency Electronic/Photonic Devices and Systems for Dual-Use Applications
Paul S. Idell; Andrew R. Pirich; Stanley R. Czyzak; Paul L. Repak; Paul S. Idell; Stanley R. Czyzak, Editor(s)

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